CY62157ELL-45ZSXIT Temperature Sensor Chip Ic Sram 8mbit Parallel 44tsop Ii

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CY62157ELL-45ZSXIT Temperature Sensor Chip Ic Sram 8mbit Parallel 44tsop Ii

Name: CY62157ELL45ZSXIT Temperature Sensor Chip Ic Sram 8mbit Parallel 44tsop Ii
Brand: original
Price: 1 USD

Brand Name : original

Model Number : CY62157ELL-45ZSXIT

Certification : original

Place of Origin : original

MOQ : 1

Price : negotiation

Payment Terms : T/T, L/C

Supply Ability : 100,000

Delivery Time : 1-3working days

Packaging Details : carton box

Product Status : Active

Memory Type : Volatile

Memory Format : SRAM

Technology : SRAM - Asynchronous

Memory Size : 8Mbit

Memory Organization : 512K x 16

Memory Interface : Parallel

Write Cycle Time - Word, Page : 45ns

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CY62157ELL-45ZSXIT Temperature Sensor Chip Ic Sram 8mbit Parallel 44tsop Ii

SRAM - Asynchronous Memory IC 8Mbit Parallel 45 ns 44-TSOP II

Specifications of CY62157ELL-45ZSXIT

TYPE	DESCRIPTION
Category	Integrated Circuits (ICs)
	Memory
	Memory
Mfr	Infineon Technologies
Series	MoBL®
Package	Tape & Reel (TR)
Product Status	Active
Memory Type	Volatile
Memory Format	SRAM
Technology	SRAM - Asynchronous
Memory Size	8Mbit
Memory Organization	512K x 16
Memory Interface	Parallel
Write Cycle Time - Word, Page	45ns
Access Time	45 ns
Voltage - Supply	4.5V ~ 5.5V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package	44-TSOP II
Base Product Number	CY62157

Features of CY62157ELL-45ZSXIT

■ Very high speed: 45 ns

- Industrial: –40 °C to +85 °C

- Automotive-E: –40 °C to +125 °C

■ Wide voltage range: 4.5 V–5.5 V

■ Ultra low standby power

- Typical standby current: 2 A

- Maximum standby current: 8 A (Industrial)

■ Ultra low active power

- Typical active current: 1.8 mA at f = 1 MHz

■ Ultra low standby power

■ Easy memory expansion with CE1, CE2 and OE features

■ Automatic power down when deselected

■ CMOS for optimum speed and power

■ Available in Pb-free 44-pin TSOP II and 48-ball VFBGA package

Applications of CY62157ELL-45ZSXIT

The CY62157E is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input or output pins (I/O0 through I/O15) are placed in a high impedance state when:

■ Deselected (CE1HIGH or CE2 LOW)

■ Outputs are disabled (OE HIGH)

■ Both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH)

■ Write operation is active (CE1 LOW, CE2 HIGH and WE LOW)

Environmental & Export Classifications of CY62157ELL-45ZSXIT

ATTRIBUTE	DESCRIPTION
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	3A991B2A
HTSUS	8542.32.0041

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