S29WS256P0PBFW000 Temperature Sensor Chip Ic Flash 256mbit Parallel 84fbga

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S29WS256P0PBFW000 Temperature Sensor Chip Ic Flash 256mbit Parallel 84fbga

Name: S29WS256P0PBFW000 Temperature Sensor Chip Ic Flash 256mbit Parallel 84fbga
Brand: original
Price: 1 USD

Brand Name : original

Model Number : S29WS256P0PBFW000

Certification : original

Place of Origin : original

MOQ : 1

Price : negotiation

Payment Terms : T/T, L/C

Supply Ability : 100,000

Delivery Time : 1-3working days

Packaging Details : carton box

Memory Type : Non-Volatile

Memory Format : FLASH

Technology : FLASH - NOR

Memory Size : 256Mbit

Memory Organization : 16M x 16

Memory Interface : Parallel

Clock Frequency : 66 MHz

Write Cycle Time - Word, Page : 60ns

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S29WS256P0PBFW000 Temperature Sensor Chip Ic Flash 256mbit Parallel 84fbga

FLASH - NOR Memory IC 256Mbit Parallel 66 MHz 80 ns 84-FBGA (11.6x8)

Specifications of S29WS256P0PBFW000

TYPE	DESCRIPTION
Category	Integrated Circuits (ICs)
	Memory
	Memory
Mfr	Infineon Technologies
Series	WS-P
Package	Tray
Product Status	Discontinued at Digi-Key
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NOR
Memory Size	256Mbit
Memory Organization	16M x 16
Memory Interface	Parallel
Clock Frequency	66 MHz
Write Cycle Time - Word, Page	60ns
Access Time	80 ns
Voltage - Supply	1.7V ~ 1.95V
Operating Temperature	-25°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	84-VFBGA
Supplier Device Package	84-FBGA (11.6x8)
Base Product Number	S29WS256

Features of S29WS256P0PBFW000

• Single 1.8 V read/program/erase (1.70–1.95 V)

• 90 nm MirrorBit™ Technology

• Simultaneous Read/Write operation with zero latency

• Random page read access mode of 8 words with 20ns intra page access time

• 32 Word / 64 Byte Write Buffer

• Sixteen-bank architecture consisting of 32/16/8 Mwords for 512/256/128P, respectively

• Four 16 Kword sectors at both top and bottom of memory array

• 510/254/126 64Kword sectors (WS512/256/128P)

• Programmable linear (8/16/32) with or without wrap around and continuous burst read modes

• Secured Silicon Sector region consisting of 128 words each for factory and 128 words for customer

• 20-year data retention (typical)

• Cycling Endurance: 100,000 cycles per sector(typical)

• Command set compatible with JEDEC (42.4) standard

• Hardware (WP#) protection of top and bottom sectors

• Dual boot sector configuration (top and bottom)

• Handshaking by monitoring RDY

• Offered Packages

– WS512P/WS256P/WS128P: 84-ball FBGA (11.6 mm x 8 mm)

• Low VCC write inhibit

• Persistent and Password methods of Advanced Sector Protection

• Write operation status bits indicate program and erase operation completion

• Suspend and Resume commands for Program and Erase operations

• Unlock Bypass program command to reduce programming time

• Synchronous or Asynchronous program operation, independent of burst control register settings

• ACC input pin to reduce factory programming time

• Support for Common Flash Interface (CFI)

Applications of S29WS256P0PBFW000

• Using the Operation Status Bits in AMD Devices

• Understanding Burst Mode Flash Memory Devices

• Simultaneous Read/Write vs. Erase Suspend/Resume

• MirrorBit® Flash Memory Write Buffer Programming and Page Buffer Read

• Design-In Scalable Wireless Solutions with Cypress Products

• Common Flash Interface Version 1.4 Vendor Specific Extensions

Environmental & Export Classifications of S29WS256P0PBFW000

ATTRIBUTE	DESCRIPTION
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	3A991B1A
HTSUS	8542.32.0071

S29WS256P0PBFW000 Temperature Sensor Chip Ic Flash 256mbit Parallel 84fbga

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